Pioneer F-26

The F-26 tuner, like the other components in the Series 20 line, received carefully design engineering to push the technological envelope on tuner design. In true audiophile fashion, it featured FM only. It was a higher performance, lower profile design compared to the F28 tuner. Pioneer employed newfeatures and circuitry having: Quartz-Locked Touch Sensor Tuning, an elaborate "Clean Pilot" system for cleaner high-frequency, and a Parallel Balanced Linear Detector( PBLD) for vastly improved signal-to-noise ratio and detection efficiency. This tuner also featured automatic wide/narrow IF bandwidth slection. The F-26 was design with a large power supply and two 6000 microfarad power supply capacitors, a muting level control on the rear panel, adjustable stereo/mono signal switchover, adjustable muting control, and gold plated terminals.

Specifications

Circuit system:

Quartz sampling locked, IF band auto switching, P.B.L. A detector, the pilot signal auto cancellar built-in PLL MPX

S/N (sensitivity 50 dB):

mono: 3.5 microvolts (new IHF and 16.1 dBf),

stereo: 40 microvolts (new IHF and 37.2 dBf)

Practical speed: mono: 1.8 microvolts, new IHF 10.3 dBf

S/N ratio:

mono: 86 dB,

stereo: 83 dB

THD:

Wide: 0.05% (20 Hz)

Mono:

0.03% (1 kHz),

0.03% (10 kHz),

0.04% (15 kHz)

Stereo:

0.06% (20 Hz),

0.05% (1 kHz),

0.1% (10 kHz),

0.25% (15 kHz)

THD Narrow:

mono: 0.15% (1 kHz),

stereo: 0.3% (1 kHz)

Capture ratio Narrow: 2.0 dB

Effective selectivity Narrow: 75 dB (300 kHz)

Stereo separation:

Wide:

55 dB (1 kHz),

50 dB (50 Hz - 10 kHz),

40 dB (20 Hz - 15 kHz)

Narrow: 50 dB (1 kHz)

Image stonewalling ratio: 120 dB

IF stonewalling ratio: 120 dB

Spurious stonewalling ratio: 120 dB

AM supression ratio: 65 dB

Subcarrier ratio: 75 dB

Muting operation level: 5.5 microvolts (20 dBf) - a 55-microvolt (40 dBf) variable

Auto mono-switching level: 17 microvolts (30 dBf) - a 170-microvolt (50 dBf) variable

Antenna: 300 Ω balance type, 75 Ω unbalance type

Level/Output load impedance (100% modulation):

Fixed: 650 mV / 2.2 kohm

Variable: 50 mV - 1.3V/3 kohm (Max)

I multipath output:

Vertical: 100 mV / 5 kohm (AM, 1 kHz, 30% modulation)

Horizontal: 500 mV / 4.1 kohm (FM, 1 kHz, 100% modulation)

The semiconductor used:

FET: 10 pieces,

Transistor: 66 pieces,

IC: 16 pieces,

Diode, others : 54 pieces

Power supply 100 - 240 V, 50/60 Hz

Power consumption: 14 W

Dimensions (W x H x D): 420 x 81 x 355 mm

Weight: 7,5 kg